INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS RAS  
STRUCTURE   HOW TO TOUCH US   ABOUT US   SCIENTIFIC COUNCIL   WORKSHOPS & CONFERENCES   SEMINARS   COLLABORATION  
 STRUCTURE | ADMINISTRATION | LABORATORIES 

LABORATORY ION TECHNOLOGY
PUBLICATIONS



RUSSIAN VERSION


word,
as typed:


laboratory N8
Main
Staff
    Articles
    1. V.V. Privezencev, V.S. Kalinauskas, V.V. Zatekin, V.I. Zinenko, Yu.A. Agafonov, V.K. Egorov, E.A. Shteynman,A.N. Tereschenko, K.D. Scherbachov, "Issledovanie struktury SiO2/Si posledovatel'no implantirovannoy ionami 64Zn+ i 16O+ i termoobrabotannoy v neytral'no-inertnoy srede", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N5, c.29, 2019g.
    2. Vyatkin A.F., "Kontroliruemyy sintez grafena na medi s ispol'zovaniem metoda implantacii atomov otdachi ugleroda", Pis'ma v ZhTF, V, N, c.49, 2019g.
    3. Lapin N.V. Grin'ko V.V., Bezhok V.S., Vyatkin A.F., "Poluchenie vodoroda nizkotemperaturnym okislitel'nym vodno-parovym reformingom etanola na katalizatore Ni/ZnO", Al'ternativnaya energetika i ekologiya, V, N, c.62, 2019g.
    4. Yu.A.Agafonov, N.M.Bogatov, L.R.Grigorian, V.I.Zinenko, A.I.Kovalenko, M.S.Kovalenko, F.A.Kolokolov, "Effect of low-energy proton irradiation on parameters of silicon structures with n-p junction", J Physics: Conference Series, V1015, N, c.022006, 2018g.
    5. V.I. Zinenko, Yu.A. Agafonov, V.V. Saraykin, V.G. Eremenko, D.V. Roshchupkin, D.M. Sedlovets, "Growth of SiC films on silicon substrate by cold implantation of recoil atoms", Materials Letters, V, N233, c.115, 2018g.
    6. Yu.A. Agafonov, N.M. Bogatov, L.R. Grigor'yan, V.I. Zinenko, A.N. Kovalenko, M.S. Kovalenko, D.A. Kolokolov, "Vliyanie radiacionnyh defektov, sozdannyh nizkoenergetichnymi protonami v sil'nolegirovannom sloe, na harakteristiki kremnievyh n+ - p- p+ - struktur", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N10, c.86, 2018g.
    7. A.N. Pustovit, "Emissionnaya teoriya raspyleniya amorfnyh materialov. Samoraspylenie", Izvestiya RAN, ser. Fizicheskaya, V82, N2, c.166, 2018g.
    8. A.N. Pustovit, "EMISSIONNAYa TEORIYa RASPYLENIYa AMORFNYH MATERIALOV: ZAVISIMOST' KOEFFICIENTA RASPYLENIYa OT UGLA PADENIYa PERVIChNOGO IONNOGO PUChKA", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N9, c.97, 2018g.
    9. Yu.A. Agafonov, V.I. Zinenko, O.V. Kononenko, V.V. Saraykin, "Sintez grafena metodom holodnoy implantacii atomov otdachi ugleroda", Pis'ma v ZhTF, V43, N12, c.52, 2017g.
    10. A.N. Pustovit, "EMISSIONNAYa TEORIYa RASPYLENIYa AMORFNYH MATERIALOV. ENERGETIChESKIE ZAVISIMOSTI KOEFFICIENTA RASPYLENIYa", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N10, c.77, 2017g.
    11. Z. Insepov, A. Ainabayev, S. Kirkpatrick, M. Walsh Jr., A.F. Vyatkin, "Nanometer size hole fabrication in 2d ultrathin films with cluster ion beams", AIP Advances, V7, N-, c.075014, 2017g.
    12. A.N. Pustovit, "Glubina vyhoda raspylennyh chastic pri naklonnom padenii pervichnogo oinnogo puchka", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N6, c.12, 2016g.
    13. K B Dybyspayeva, A Zhuldassov1, A Ainabayev, A F Vyatkin, K Alekseev and Z Insepov, ", Multiscale simulation of ion beam impacts on a graphene surface", J Physics: Conference Series, V751, N1, c.1, 2016g.
    14. A.F. Vyatkin, V.T. Volkov, A.S. Kolchina, "Strukturnye aspekty vzaimodeystviya vodoroda so splavami Pd-Ag i Pd-In-Ru", Al'ternativnaya energetika i ekologiya, V, N21, c.37, 2016g.
    15. . V.V.Grin'ko, V.S.Bezhok, N.V.Lapin, A.F.Vyatkin, "Nizkotemperaturnaya vodno-parovaya konversiya etanola na katalizatore Ni/ZnO v mikrokanal'nom reaktore", Al'ternativnaya energetika i ekologiya, V185, N15, c.112, 2016g.
    16. . Zeke Insepov, Ardak Ainabayev, Kumiszhan Dybyspayeva, Abat Zhuldassov, Sean Kirkpatrick, Micheal Walsh and Anatoly F. Vyatkin,, "Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions", MRS Advances, V1, N20, c.1417, 2016g.
    17. Zeke Insepov, Kurbangali B. Tynyshtykbaev, Ardak Ainabayev, Anatoly F. Vyatkin, "Acoustic-Electric Properties of Graphene under the Influence of a Surface Acoustic Waves and an External DC Field", MRS Advances, V, N, c.1, 2016g.
    18. N.V.Lapin, V.S.Bezhok, V.V.Grin'ko, A.F.Vyatkin, "Vybor nositelya katalizatora dlya snizheniya soderzhaniya monookisi ugleroda pri reforminge etanola", Al'ternativnaya energetika i ekologiya, V185, N21, c.216, 2015g.
    19. Vyatkin A.F., Volkov V.T., Eremenko V.G., Kasumov Yu.A., Kolchina A.S., "Eksperimental'nye issledovaniya nachal'nyh stadiy rosta tonkih plenok splava Pd-Ag.", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N2, c.34, 2015g.
    20. Shilobreeva S.N., Zinenko V.I., Agafonov Yu.A., Saraykin V.V., Bronskiy V.S., "Migraciya atomov zheleza v kristallicheskih (Si) i amorfnyh telah", Geohimiya, V, N7, c.603, 2014g.
    21. A.N. Pustovit, A.M. Ionov, "Kriosistema dlya ohlazhdeniya obrazcov vtorichno-ionnogo mass-spektrometra so staticheskim analizatorom", Pribory i tehnika eksperimenta, V, N1, c.133, 2014g.
    22. K. D. Shcherbacheva, M. I. Voronovaa, V. T. Bublika, V. N. Mordkovichb, D. M. Pazhinb, V. I. Zinenkob, and Yu. A. Agafonovb, "Influence of the Chemical Nature of Implanted Ions on the Structure of a Silicon Layer Damaged by Implantation", Crystallography Reports, V58, N7, c.1010, 2013g.
    23. A.N.Pustovit, "Izmenenie sostava pripoverhnostnogo sloya kremniya pri raspylenii ionnymi puchkami kisloroda i ceziya", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N2, c.78, 2013g.
    24. Orlov A.F.,Balagurov L.A.. Kulemanov I.A.,Perov N.S., Gan'shina E.A., Semisalova A.S.,Rubacheva A.D., Zinenko V.I., Agafonov Yu.A., Saraykin V.V., "Magnitnye i magnitoopticheskie svoystva ferromagnitnogo poluprovodnika GaN : Crr", Fizika Tverdogo Tela, V54, N2, c.267, 2012g.
    25. A.A.Tereschenko, V.I.Zinenko, I.I.Hodos, Yu.A.Agafonov, A.A.Zhohov, V.M.Masalov, E.A.Shteynman, G.A.Emel'chenko, "Lyuminescenciya almaza, inducirovannaya ionnoy implantaciey Ne+ v kompozity SiC/C so strukturoy invertirovannogo opala", Fizika Tverdogo Tela, V54, N3, c.549, 2012g.
    26. G.A.Emel'chenko, V.M.Maslov, A.A.Zhohov, A.N.Tereschenko, E.A.Shteynman, V.I.Zinenko, I.I.Hodos, Yu.A.Agafonov, "Uglerodnye i uglerod-karbidkremnievye nanokompozity so strukturoy invertirovannogo opala", Rossiyskiy himicheskiy zhurnal, VLVI, N1-2, c.44, 2012g.
    27. A.F.Vyatkin,Yu.A. Agafonov, A.N. Pustovit, "Cold implants of boron and manganese ions in Si, SiO2 , and GaAs", AIP Conference Proceedings, V1496, N, c.83, 2012g.
    28. A.F.Vyatkin, V.I.Zinenko, "Posloynyy analiz metallizacii sovremennyh integral'nyh shem s pomosch'yu fizicheskogo ionnogo raspyleniya", Izvestiya VUZov. Elektronika, V, N2(94), c.95, 2012g.
    29. A.N.Pustovit,A.F.Vyatkin, "PRECIZIONNOE PROFILIROVANIE PO GLUBINE STRUKTUR NANOELEKTRONIKI S ISPOL'ZOVANIEM VTORIChNYH MOLEKULYaRNYH IONOV V METODE VIMS", Izvestiya RAN, ser. Fizicheskaya, V76, N9, c.1121, 2012g.
    30. Yu.A.Agafonov,A.F.Vyatkin,A.n.Pustovit, "" Evolyuciya profiley raspredeleniya bora i marganca , implantirovannyh v Si, SiO2 i GaAs pri temperaturah 300K i 90K "", Vest. Nizhegorodskogo Universiteta, V5, N1, c.42, 2011g.
    31. A.F.Vyatkin, V.I.Zinenko, "Diagnostika otkazov integral'nyh mikroshem s ispol'zovaniem fizicheskogo ionnogo raspyleniya", Pribory i tehnika eksperimenta, V, N2, c.132, 2011g.
    32. A.F.Vyatkin, V.I.Zinenko, A.I.Il'in, O.V.Trofimov, "Planarizaciya prostranstvenno-neodnorodnyh struktur s ispol'zovaniem fizicheskogo ionnogo raspyleniya", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N12, c.59, 2011g.
    33. Yu.A.Agafonov,A.F.Vyatkin,A.N.Pustovit, "EVOLYuCIYa PROFILEY RASPREDELENIYa BORA I MARGANCA, IMPLANTIROVANNYH V Si, SiO2 I GaAs PRI TEMPERATURAH 300 K I 90 K", Vest. Nizhegorodskogo Universiteta, V, N5(1), c.42, 2011g.
    34. A.F.Orlov, L.A.Balagurov, I.V.Kulemanov, Yu.N.Parhomenko, A.V.Kartavyh, V.V.Saraykin, Yu.A.Agafonov, V.I.Zinenko, "Soprotivlenie rastekaniya i kompensaciya nositeley zaryada v ferromagnitnom kremnii, implantirovannom margancem", Fizika i Tehnika Poluprovodnikov, V44, N1, c.30, 2010g.
    35. A.N.Pustovit, "Diagnostika metodom VIMS struktury nonometrovyh poluprovodnikovyh sloev, legirovannyh primesyami", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N9, c.101, 2010g.
    36. A.N.Pustovit, "Neuprugie stolknoveniya atomnyh chastic srednih energiy v tverdyh telah", Izvestiya RAN, ser. Fizicheskaya, V74, N2, c.184, 2010g.
    37. A.F.Orlov, A.B.Granovskiy, L.A.Balagurov, I.V.Kulemanov, Yu.N.Parhomenko, N.S.Perov, E.A.Gan'shina, V.T.Bublik, K.D.Scherbachev, A.V.Kartavyh, V.I.Vdovin, A.Sapelkin, Yu.A.Agafonov, V.I.Zinenko, A.Rogalev, A.Smehova, "Struktura, elektricheskie i magnitnye svoystva i priroda ferromagnetizma pri komnatnoy temperature v kremnii, implantirovannom margancem", ZhETF, V136, N10, c.703, 2009g.
    38. A.F.Orlov, V.T.Bublik, V.I.Vdovin, Yu.A.Agafonov, L.A.Balagurov, V.I.Zinenko, I.V.Kulemanov, K.D.Scherbachev, "O sostoyanii implantirovannoy primesi Mn v Si", Kristallografiya, V54, N4, c.596, 2009g.
    39. A.F.Orlov, L.A.Balagurov, I.V.Kulemanov, Yu.N.Parkhomenko, A,V.Rartavykh, V.V.Saraikin, Yu.A.Agafonov and V.I.Zinenko, "Charge Carriers Compensation in Ferromagnetic Mn- Implanted Si", The Open Applied Physics Journal, V, N2, c.20, 2009g.
    40. A.F.Orlov, Yu.A.Agafonov, L.A.Balagurov, V.T.Bublik, V.I.Zinenko, N.S.Petrov, V.V.Saraykin, K.D.Scherbachev, "Issledovanie strukturnyh harakteristik ferromagnitnogo Si, implantirovannogo Mn", Kristallografiya, V53, N4, c.696, 2008g.
    41. S.N.Shilobreeva, L.L.Kashkarov, M.Yu.Barabanenkov, A.N.Pustovit, V.I.Zinenko, Yu.A.Agafonov, "Proton and temperature-induced competitive segregation of iron on surface and volume sinks of silica", Nucl. Instrum. & Methods B, V256, N, c.216, 2007g.
    42. A.B.Granovskiy, Yu.P.Suhorukov, A.F.Orlov, N.S.Perov, A.V.Korolev, E.A.Gan'shina, V.I.Zinenko, Yu.A.Agafonov, V.V.Saraykin, A.V.Telegin,D.G.Yarkin, "Ferromagnetizm kremniya, implantirovannogo Mn; namagnichennost' i magnito-opticheskiy effekt Faradeya", Pis'ma v ZhETF, V85, N7, c.414, 2007g.
    43. K.V.Rudenko,A.V.Myakon'kih,A.A.Orlikovskiy,A.N.Pustovit, "Zondovye izmereniya parametrov plazmy v tehnologicheskih HDP-reaktorah mikroelektroniki v usloviyah osazhdeniya dielektricheskih plenok", Mikroelektronika, V36, N1, c.17, 2007g.
    44. V.G.Beshenkov,A.G.Znamenskiy,V.A.Marchenko,A.N.Pustovit,A.V.Chernyh, "Rasshirenie oblasti temperatur epitaksial'nogo rosta plenok YSZ na Si [100] pri magnetronnom napylenii", Zh. Tehn. Fiziki, V77, N5, c.102, 2007g.
    45. A.N.Georgobiani,A.N.Gruzintsev,V.T.Volkov,A.N.Pustovit,V.I.Dernin,V.A.Dravin,I.F.Gushin, "Luminescence of ZnO Films Implanted with Au+ Ions and Annealed in Oxygen Radicals", Kratkie soobscheniya po fizike FIAN, V34, N6, c.159, 2007g.
    46. S.N.Shilobreeva, L.L.Kashkarov, M.Yu.Barabanenkov, A.N.Pustovit, V.I.Zinenko, and Yu.A.Agafonov, ""Proton Stimulated Redistribution of Fe Atoms in Quartz: Experimental Modeling of the Space Radiation Effects"", Doklady Earth Sciences +, V411, N9, c.1466, 2006g.
    47. A.N. Pustovit, A.F. Vyatkin, "VIMS-diagnostika nanometrovyh poluprovodnikovyh struktur s ispol'zovaniem ionov ceziya", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N, c.65, 2006g.
    48. A.N. Pustovit, "Neuprugie stolknoveniya atomnyh chastic srednih energiy. Kachestvennaya model' poter' energii pri stolknovenii", Poverhnost'. Rentgenovskie, sinhrotronnye i neytronnye issledovaniya., V, N10, c.41, 2006g.
    49. K.Rudenko,S.Averkin,V.Lukichev,A.Orlikovsky,A.Pustovit,A.Vyatkin, "Ultra Shallow p(+) - n Junctions in Si Produced by Immersion Ion Implantation", Proceedings of SPIE, V6260, N, c.6260031, 2006g.
    50. S.N.Shilobreva,L.L.Kashkarov,M,Yu.Barabanenkov,A.N.Pustovit,V.I.Zinenko,and Yu.A.Agafonov, "Proton-Stimulated Redistribution of Fe Atoms in Quartz: Experimental Modeling of the Space Radiation Effect", Doklady Earth Sciences +, V411A,November-Decemb, N9, c.1466, 2006g.
    51. V.Avrutin,U.Ozgur,H.Lee,H.Morkoc,A. Che Mofor,A. El-Shaer,A.Bakin,A.Waag,N.Izyumskaya,W.Schoch,F.Reuss,V.Beshenkov,A.N.Pustovit,A.F,Vyatkin, "Optical and Electrical Properties of ZnMnO Layers Grown by Peroxide MBE", Superlattises and Microstructures, V39, N, c.291, 2006g.
    52. A.F.Vyatkin, V.I.Zinenko, Yu.A.Agafonov, A.N.Pustovit, D.V.Roshchupkin, F.Reuss, C.Kirshner, R.Kling, A.Waag, "High-dose V+ implantation in ZnO thin film structures", Nucl. Instrum. & Methods B, V237, N, c.179, 2005g.
    53. V.I.Zinenko, Yu.A.Agafonov, A.F.Vyatkin, A.N.Pustovit,, "Poluchenie melko zalegayuschih profiley raspredeleniya atomov bora v kremnii metodom implantacii atomov otdachi", Vest. Nizhegorodskogo Universiteta, V8, N1, c.5, 2005g.
    54. V.I.Zinenko,Yu.A.Agafonov, A.F. Vyatkin,A.N. Pustovit, "Poluchenie melko zalegayuschih profiley raspredeleniya atomov bora v kremnii metodom implantacii atomov otdachi", Vest. Nizhegorodskogo Universiteta, V, N, c.5, 2005g.
    55. V.I.Zinenko, Yu.A.Agafonov, A.F.Vyatkin, A.N.Pustovit, "Poluchenie melko zalegayuschih profiley raspredelenie atomov bora v kremnii metodom implantacii atomov otdachi", Vest. Nizhegorodskogo Universiteta, V, N, c.5, 2005g.
    Patents
    1. Irzhak D.V., Chernysh V.S., Vyatkin A.F., "Sposob modifikacii nanostruktur materialov elektronnoy tehniki gazovymi klasternymi ionami", 2019g.
    2. Vyatkin A.F., Roschupkin D.V., Sirotkin V. V., Emelin E.V., Irzhak D.V. Irzhak A.V., "pryamoy metanol'nyy toplivnyy element", 2019g.
    3. Irzhak Dmitriy Vadimovich, Chernysh Vladimir Savel'evich, Vyatkin Anatoliy Fedorovich, "Sposob planarizacii poverhnosti nanostruktur materialov elektronnoy tehniki puchkom gazovyh klasternyh ionov", 2019g.
    4. Vyatkin A.F., Zinenko V.I., Agafonov Yu.A., Saraykin V.V., "Sposob sozdaniya melko zalegayuschih nanorazmernyh legirovannyh sloev v kremnii", 2014g.
           © IMT RAS, 1996-2024